Growth of polarity-controlled ZnO films on (0001) Al2O3

被引：11
|
作者：
Park, J. S. [1 ]
Chang, J. H. [2 ]
Minegishi, T. [1 ]
Lee, H. J. [1 ]
Park, S. H. [1 ]
Im, I. H. [1 ]
Hanada, T. [1 ]
Hong, S. K. [3 ]
Cho, M. W. [1 ,4 ]
Yao, T. [1 ,4 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan
[2] Korea Maritime Univ, Pusan, South Korea
[3] Chungnam Natl Univ, Dept Nano Informat Syst Engn, Taejon, South Korea
[4] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 980, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期
关键词：
polarity; PPZnO; interface; ZnO; nitrides; buffer layers;
D O I：
10.1007/s11664-007-0350-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I-8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.
引用
收藏
页码：736 / 742
页数：7
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