Ion-implanted resist removal using atomic hydrogen

被引：10

作者：

Horibe, H. ^{[1
,3
]}

Yamamoto, M. ^{[1
]}

Maruoka, T. ^{[1
]}

Goto, Y. ^{[1
]}

Kono, A. ^{[1
]}

Nishiyama, I. ^{[2
]}

Tagawa, S. ^{[3
]}

机构：

[1] Kanazawa Inst Technol, Haku San, Ishikawa 9240838, Japan

[2] Daipla Wintes, Amagasaki, Hyougo 6600807, Japan

[3] Osaka Univ, Osaka 5670047, Japan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 14期

关键词：

Ion-implanted resist; Resist removal; Atomic hydrogen; Chemicals; Surface-hardened layer; Catalytic CVD; CHEMICAL-VAPOR-DEPOSITION; H-ATOMS; PHOTORESIST;

D O I：

10.1016/j.tsf.2011.01.287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 x 10(12) to 5 x 10(15) atoms/cm(2) at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B. P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4578 / 4581

页数：4

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