Ion-implanted resist removal using atomic hydrogen

被引：10
|
作者：
Horibe, H. [1 ,3 ]
Yamamoto, M. [1 ]
Maruoka, T. [1 ]
Goto, Y. [1 ]
Kono, A. [1 ]
Nishiyama, I. [2 ]
Tagawa, S. [3 ]
机构：
[1] Kanazawa Inst Technol, Haku San, Ishikawa 9240838, Japan
[2] Daipla Wintes, Amagasaki, Hyougo 6600807, Japan
[3] Osaka Univ, Osaka 5670047, Japan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 14期
关键词：
Ion-implanted resist; Resist removal; Atomic hydrogen; Chemicals; Surface-hardened layer; Catalytic CVD; CHEMICAL-VAPOR-DEPOSITION; H-ATOMS; PHOTORESIST;
D O I：
10.1016/j.tsf.2011.01.287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 x 10(12) to 5 x 10(15) atoms/cm(2) at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B. P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：4578 / 4581
页数：4
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