A native oxide layer on a silicon substrate has an effect on adhesion of a resist micro pattern. Native oxide growth is investigated in various environments such as air, DI(deionized)-water and methanol. In air and DI-water, the native oxide thickness increases gradually as the storage time increases. On the other hand, in methanol, the growth rate of native oxide is quite low for the storage of 5h. In order to obtain a stable surface condition of Si substrate, these results can be applied effectively.
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Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
SORST JST, Tokyo, JapanTokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
Li, C. B.
Usami, K.
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Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
SORST JST, Tokyo, JapanTokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
Usami, K.
Muraki, T.
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Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, JapanTokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
Muraki, T.
Mizuta, H.
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Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
SORST JST, Tokyo, JapanTokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
Mizuta, H.
Odal, S.
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SORST JST, Tokyo, JapanTokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan