Preparation and electrical properties of Batio3 thin films by mist plasma evaporation

被引：0

作者：

Huang, H ^{[1
]}

Yao, X ^{[1
]}

机构：

[1] Xian Jiaotong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China

来源：

MATERIALS RESEARCH INNOVATIONS | 2005年 / 9卷 / 01期

关键词：

mist plasma evaporatio; plasma torch; barium titanate; dielectric properties;

D O I：

10.1080/14328917.2005.11784877

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of mist plasma evaporation (MPE) technique for the deposition of the thin films of BaTiO3 using metal chlorides as a precursor was described. The film deposited on Si substrate at 600°C for 20 min was perovskite BTO, and showed (100)-preferential orientation. A second phase of Ba2TiSi2O8 was found in the BTO/Si films deposited at 730°C and 690°C. The grain size was found to decrease with the decreasing of the substrate temperature. The thickness of the film measured by SEM cross view was 600 nm.

引用

页码：23 / 25

页数：3

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