A Study on the Electrical Properties of the BaTiO3 Ceramic Thin Films

被引：0
|
作者：
Im, Ik-Tae [1 ]
Jo, Hyun Seob [2 ]
Oh, Sung Hoon [3 ]
So, Byung Moon [4 ]
机构：
[1] Chonbuk Natl Univ, Div Mech Design Engn, Jeonju 561756, Jeollabuk Do, South Korea
[2] Chung Woon Univ 29, Dept Elect Engn, Hongsung Kun 350701, Choongchungnam, South Korea
[3] Chonbuk Natl Univ, Dept Mech Syst Engn, Jeonju 561756, Jeollabuk Do, South Korea
[4] Chonbuk Natl Univ, Dept IT Appl Syst Engn, Jeonju 561756, Jeollabuk Do, South Korea
来源：
GRID AND DISTRIBUTED COMPUTING | 2011年 / 261卷
关键词：
BaTiO3; Thin Film; Thermistor;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Polycrystalline BaTiO3 thin films have been prepared on slid grass substrate by RF/DC magnetron sputtering equipment. The films were deposited at evoporator system and were annealed at heattreatment. The films had a dense microstruture with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of PTCR(positive temperature coefficient of Resistivity) Samples were made in the substrate tempera-true of 400 degrees C deposition time of 10 hours,and forward power of 210watt. R-T(resistivity-tempera-true) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system. we obtained lower resistivity in the thermistor with thin BaTiO3 film than that in the bulk type thermistor.
引用
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页码：361 / +
页数：2
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