Preparation and electrical properties of Batio3 thin films by mist plasma evaporation

The use of mist plasma evaporation (MPE) technique for the deposition of the thin films of BaTiO3 using metal chlorides as a precursor was described. The film deposited on Si substrate at 600°C for 20 min was perovskite BTO, and showed (100)-preferential orientation. A second phase of Ba2TiSi2O8 was found in the BTO/Si films deposited at 730°C and 690°C. The grain size was found to decrease with the decreasing of the substrate temperature. The thickness of the film measured by SEM cross view was 600 nm.