Non-EOS Root Causes of EOS-Like Damage

被引：0

作者：

Righter, Alan ^{[1
]}

Wolfe, Ed ^{[1
]}

Hajjar, Jean-Jacques ^{[1
]}

机构：

[1] Analog Devices Inc, Wilmington, MA 01887 USA

来源：

2014 36TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Failures resembling damage from electrical overstress (EOS) may not always have their root cause related to a direct EOS transient. The authors describe examples from packaging, manufacturing and test where the damage signature was EOS although the root cause was non-EOS in origin. Containment and/or resolution in each case is reviewed.

引用

页数：6

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