Cd desorption induced by Zn exposure during atomic layer epitaxy of CdxZn1-xTe

被引：4
|
作者：
Larramendi, EM [1 ]
de Melo, O
Hernández-Calderón, I
机构：
[1] Univ Havana, Fac Phys, Havana, Cuba
[2] Inst Politecn Nacl, CINVESTAV, Dept Phys, Mexico City 07000, DF, Mexico
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 09期
关键词：
D O I：
10.1002/pssb.200461730
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The substitution of surface Cd atoms by Zn atoms during the growth of CdxZn1-xTe by atomic layer epitaxy has been studied as a function of substrate temperature and Zn exposure time by means of the analysis of the photoluminescence spectra of CdxZn1-xTe/ZnTe quantum wells. For substitution and desorption of Cd induced by Zn exposure an activation energy of 1.5 eV was found. The complexity of this desorption process was denoted by the fourth order of the kinetic reaction in the 250-280 degrees C temperature range. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：1946 / 1950
页数：5
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