Effect of the Cd0.96Zn0.04Te substrate polishing procedure on CdxHg1 − xTe liquid phase epitaxy

被引:0
|
作者
Sh. O. Eminov
A. A. Rajabli
T. I. Ibragimov
机构
[1] Academy of Sciences of Azerbaijan,Abdullaev Institute of Physics
来源
Inorganic Materials | 2010年 / 46卷
关键词
Abrasive Particle; Liquid Phase Epitaxy; CdZnTe Substrate; Chemical Polishing; Etch Pattern;
D O I
暂无
中图分类号
学科分类号
摘要
This paper examines the effect of polishing procedure on the surface quality of Cd0.96Zn0.04Te substrates for CdxHg1 − xTe liquid phase epitaxy. Two polishing procedures are tested: stepwise polishing involving abrasive, chemomechanical, and chemical steps with the use of various abrasives, and abrasive-free polishing. The optimal procedure is chemomechanical polishing with no abrasives. The type of substrate surface can be identified using the Nakagawa etchant, which produces etch patterns in the form of triangles on the A(111) surface and circles on the B(111) surface.
引用
收藏
页码:714 / 717
页数:3
相关论文
共 50 条
  • [1] Effect of the Cd0.96Zn0.04Te substrate polishing procedure on Cd x Hg1-x Te liquid phase epitaxy
    Eminov, Sh. O.
    Rajabli, A. A.
    Ibragimov, T. I.
    INORGANIC MATERIALS, 2010, 46 (07) : 714 - 717
  • [2] ZN INFLUENCE ON THE PLASTICITY OF CD0.96ZN0.04TE
    IMHOFF, D
    ZOZIME, A
    TRIBOULET, R
    JOURNAL DE PHYSIQUE III, 1991, 1 (11): : 1841 - 1853
  • [3] Transport phenomena in n-MnxHg1-xTe/Cd0.96Zn0.04Te epitaxial films
    Beketov, GV
    Belyaev, AE
    Vitusevich, SA
    Kavertsev, SV
    Komirenko, SM
    SEMICONDUCTORS, 1997, 31 (03) : 218 - 221
  • [4] Transport phenomena in n-MnxHg1−xTe/Cd0.96Zn0.04Te epitaxial films
    G. V. Beketov
    A. E. Belyaev
    S. A. Vitusevich
    S. V. Kavertsev
    S. M. Komirenko
    Semiconductors, 1997, 31 : 218 - 221
  • [5] Cathodoluminescence investigations on CdTe and Cd0.96Zn0.04Te crystals
    Radhakrishnan, JK
    Salviati, G
    JOURNAL OF LUMINESCENCE, 2005, 113 (3-4) : 235 - 242
  • [6] Ge vapour phase doping of CdTe and Cd0.96Zn0.04Te crystals
    Feichuk, P
    Shcherbak, L
    Omanchukivska, I
    MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 388 - 395
  • [7] The effect of dislocations in Cd0.96Zn0.04Te single crystal on IR transmittance
    Zha, Gangqiang
    Jie, Wanqi
    Li, Qiang
    Wang, Zewen
    Xu, Yadong
    Zeng, Dongmei
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 160 - 163
  • [8] Growth and strain investigation of Cd0.96Zn0.04Te/GaAs by hot-wall epitaxy
    Kim, BJ
    Wang, JF
    Lalev, GM
    Park, YG
    Shindo, D
    Isshiki, M
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (03) : 581 - 585
  • [9] Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon
    C. Miclaus
    G. Malouf
    S. M. Johnson
    D. R. Rhiger
    M. S. Goorsky
    Journal of Electronic Materials, 2004, 33 : 552 - 555
  • [10] Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation
    C. Miclaus
    G. Malouf
    S. M. Johnson
    M. S. Goorsky
    Journal of Electronic Materials, 2005, 34 : 859 - 863