Effect of the Cd0.96Zn0.04Te substrate polishing procedure on CdxHg1 − xTe liquid phase epitaxy

被引:0
|
作者
Sh. O. Eminov
A. A. Rajabli
T. I. Ibragimov
机构
[1] Academy of Sciences of Azerbaijan,Abdullaev Institute of Physics
来源
Inorganic Materials | 2010年 / 46卷
关键词
Abrasive Particle; Liquid Phase Epitaxy; CdZnTe Substrate; Chemical Polishing; Etch Pattern;
D O I
暂无
中图分类号
学科分类号
摘要
This paper examines the effect of polishing procedure on the surface quality of Cd0.96Zn0.04Te substrates for CdxHg1 − xTe liquid phase epitaxy. Two polishing procedures are tested: stepwise polishing involving abrasive, chemomechanical, and chemical steps with the use of various abrasives, and abrasive-free polishing. The optimal procedure is chemomechanical polishing with no abrasives. The type of substrate surface can be identified using the Nakagawa etchant, which produces etch patterns in the form of triangles on the A(111) surface and circles on the B(111) surface.
引用
收藏
页码:714 / 717
页数:3
相关论文
共 50 条
  • [41] Optical and opto-electronic properties of polycrystalline Cd0.96Zn0.04Te thin films
    Sridharan, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (06) : 479 - 487
  • [42] Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films
    Sridharan, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 201 (03): : 465 - 474
  • [43] Optical and electrical study of deformed hydrogenated bulk Cd0.96Zn0.04Te single crystal
    Lmai, F.
    Brihi, N.
    Takkouk, Z.
    Guergouri, K.
    Bouzerara, F.
    Hage-Ali, M.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
  • [44] Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE
    Lalev, GM
    Wang, JF
    Lim, JW
    Abe, S
    Masumoto, K
    Isshiki, M
    MATERIALS LETTERS, 2006, 60 (9-10) : 1198 - 1203
  • [45] Raman scattering studies on B+ implanted Cd0.96Zn0.04Te thin films
    Sridharan, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    VACUUM, 2002, 68 (02) : 119 - 122
  • [46] Electronic structure of the Mn/Cd0.96Zn0.04Te(111) interface studied by synchrotron radiation
    Xu, PS
    Yang, FY
    Xu, SH
    Lu, ED
    Yu, XJ
    Fang, RC
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 217 - 220
  • [47] Investigation on Relations of Twins and Inclusions Distribution with Growth Solid-Liquid Interface in Cd0.96Zn0.04Te Crystal
    Xu, Chao
    Zhou, Changhe
    Sun, Shiwen
    Yu, Huixian
    Yang, Jianrong
    CRYSTAL RESEARCH AND TECHNOLOGY, 2018, 53 (06)
  • [48] Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by molecular beam epitaxy
    Han, MS
    Hahn, SR
    Kwon, HC
    Bin, Y
    Kang, TW
    Leem, JH
    Hou, YB
    Jeon, HC
    Hyun, JK
    Jeoung, YT
    Kim, HK
    Kim, JM
    Kim, TW
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 680 - 683
  • [49] The diffusion kinetics in isothermal epitaxy of CdxHg1 − xTe solid solutions from an unlimited liquid phase volume
    P. P. Moskvin
    V. V. Khodakovskii
    Russian Journal of Physical Chemistry A, 2007, 81 : 1845 - 1850
  • [50] RELATIONS BETWEEN STRUCTURAL PARAMETERS AND PHYSICAL-PROPERTIES IN CDTE AND CD0.96ZN0.04TE ALLOYS
    GUERGOURI, K
    MARFAING, Y
    TRIBOULET, R
    TROMSONCARLI, A
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (06): : 481 - 488