Interfacial Friction Anisotropy in Few-Layer Van der Waals Crystals

被引：5
|
作者：
Wang, Kaibo
Li, Hao
Guo, Yufeng [1 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Coll Aerosp Engn, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Peoples R China
来源：
MATERIALS | 2021年 / 14卷 / 16期
基金：
中国国家自然科学基金;
关键词：
two-dimensional crystals; friction anisotropy; pressure; thickness; first-principles calculations; SUPERLUBRICITY; NANOSCALE; GRAPHENE;
D O I：
10.3390/ma14164717
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Friction anisotropy is one of the important friction behaviors for two-dimensional (2D) van der Waals (vdW) crystals. The effects of normal pressure and thickness on the interfacial friction anisotropy in few-layer graphene, h-BN, and MoSe2 under constant normal force mode have been extensively investigated by first-principle calculations. The increase of normal pressure and layer number enhances the interfacial friction anisotropy for graphene and h-BN but weakens that for MoSe2. Such significant deviations in the interfacial friction anisotropy of few-layer graphene, h-BN and MoSe2 can be mainly attributed to the opposite contributions of electron kinetic energies and electrostatic energies to the sliding energy barriers and different interlayer charge exchanges. Our results deepen the understanding of the influence of external loading and thickness on the friction properties of 2D vdW crystals.
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页数：10
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