Impact of Heavy Ion Energy on Charge Yield in Silicon Dioxide

被引：2

作者：

Emeliyanov, Vladimir V. ^{[1
]}

Vatuev, Alexander S. ^{[1
]}

Useinov, Rustem G. ^{[1
]}

机构：

[1] Res Inst Sci Instruments, Dept Radiat Testing, Lytkarino 140080, Russia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

关键词：

Charge carrier density; charge yield; heavy ion beams; silicon dioxide; single-event effect (SEE); MOS DEVICES; RADIAL-DISTRIBUTION; X-RAY; IRRADIATIONS; TRANSISTORS; DEPOSITION; TRACKS; CO-60; WATER; SIO2;

D O I：

10.1109/TNS.2018.2813669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMOSFETs induced by irradiation with Co-60 gamma-rays and several different heavy ion species. A strong dependence of the charge yield on the ion energy is revealed. The charge yield at ion energy of 25 MeV/amu is greater by nearly an order of magnitude than that at the ion energy of 3 MeV/amu. The results are consistent with simulations of heavy ion track structures for low-and high-energy ions.

引用

页码：1496 / 1502

页数：7

共 50 条

[31] MEASUREMENT OF PARAMETERS DETERMINING ENERGY AND CHARGE LOSSES IN SILICON ION DETECTORS
VERBITSKAYA, EM
EREMIN, VK
IVANOV, AM
STROKAN, NB
TUREBEKOV, US
SCHMIDT, B
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1990, 33 (06) : 1290 - 1293
[32] THERMAL CVD SYNTHESIS OF CARBON NANOTUBES IN SWIFT HEAVY ION TRACKS OF SILICON DIOXIDE
Petrov, A. V.
Kaniukov, E. Yu.
Demyanov, S. E.
Berdinsky, A. S.
Okotrub, A. V.
Bulusheva, L. G.
Kudashov, A. V.
Kurenya, A. G.
Ivanova, Yu. A.
Ivanov, D. K.
Streltsov, E. A.
Fink, D.
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2009, : 471 - +
[33] Modeling high-energy heavy-ion damage in silicon
Spratt, JP
Burke, EA
Pickel, JC
Leadon, RE
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2136 - 2139
[34] High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride
van Vuuren, Arno Janse
Mutali, Alisher
Ibrayeva, Anel
Sohatsky, Alexander
Skuratov, Vladimir
Akilbekov, Abdirash
Dauletbekova, Alma
Zdorovets, Maxim
CRYSTALS, 2022, 12 (10)
[35] Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide
Mota-Santiago, P.
Vazquez, H.
Bierschenk, T.
Kremer, F.
Nadzri, A.
Schauries, D.
Djurabekova, F.
Nordlund, K.
Trautmann, C.
Mudie, S.
Ridgway, M. C.
Kluth, P.
NANOTECHNOLOGY, 2018, 29 (14)
[36] Charge-Exchange-Driven Low-Energy Electron Splash Induced by Heavy Ion Impact on Condensed Matter
Schwestka, Janine
Niggas, Anna
Creutzburg, Sascha
Kozubek, Roland
Heller, Rene
Schleberger, Marika
Wilhelm, Richard A.
Aumayr, Friedrich
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 10 (17): : 4805 - 481
[37] Electronic sputtering of oxides by high energy heavy ion impact
Matsunami, N
Sataka, M
Iwase, A
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 193 : 830 - 834
[38] Determination of impact parameter at intermediate energy heavy ion collision
Zhang, Fengshou
Chen, Liewen
Ming, Zhaoyu
Zhu, Zhiyuan
Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics, 2000, 24 (04): : 320 - 325
[39] Determination of impact parameter at intermediate energy heavy ion collision
Zhang, FS
Chen, LW
Ming, ZY
Zhu, ZY
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2000, 24 (04): : 320 - 325
[40] Isobaric yield ratios and the symmetry energy in heavy-ion reactions near the Fermi energy
Huang, M.
Chen, Z.
Kowalski, S.
Ma, Y. G.
Wada, R.
Keutgen, T.
Hagel, K.
Barbui, M.
Bonasera, A.
Bottosso, C.
Materna, T.
Natowitz, J. B.
Qin, L.
Rodrigues, M. R. D.
Sahu, P. K.
Wang, J.
PHYSICAL REVIEW C, 2010, 81 (04):

← 1 2 3 4 5 →