Impact of Heavy Ion Energy on Charge Yield in Silicon Dioxide

被引：2

作者：

Emeliyanov, Vladimir V. ^{[1
]}

Vatuev, Alexander S. ^{[1
]}

Useinov, Rustem G. ^{[1
]}

机构：

[1] Res Inst Sci Instruments, Dept Radiat Testing, Lytkarino 140080, Russia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

关键词：

Charge carrier density; charge yield; heavy ion beams; silicon dioxide; single-event effect (SEE); MOS DEVICES; RADIAL-DISTRIBUTION; X-RAY; IRRADIATIONS; TRANSISTORS; DEPOSITION; TRACKS; CO-60; WATER; SIO2;

D O I：

10.1109/TNS.2018.2813669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMOSFETs induced by irradiation with Co-60 gamma-rays and several different heavy ion species. A strong dependence of the charge yield on the ion energy is revealed. The charge yield at ion energy of 25 MeV/amu is greater by nearly an order of magnitude than that at the ion energy of 3 MeV/amu. The results are consistent with simulations of heavy ion track structures for low-and high-energy ions.

引用

页码：1496 / 1502

页数：7

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