Process and properties of Pt/Pb(Zr,Ti)O-3/Pt integrated ferroelectric capacitors

被引：23

作者：

Torii, K ^{[1
]}

Kawakami, H ^{[1
]}

Miki, H ^{[1
]}

Kushida, K ^{[1
]}

Itoga, T ^{[1
]}

Goto, Y ^{[1
]}

Kumihashi, T ^{[1
]}

Yokoyama, N ^{[1
]}

Moniwa, M ^{[1
]}

Shoji, K ^{[1
]}

Kaga, T ^{[1
]}

Fujisaki, Y ^{[1
]}

机构：

[1] HITACHI LTD, SEMICOND DEV CTR, KOKUBUNJI, TOKYO 185, JAPAN

来源：

INTEGRATED FERROELECTRICS | 1997年 / 16卷 / 1-4期

关键词：

D O I：

10.1080/10584589708013026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-mu m feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

引用

页码：21 / 28

页数：8

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