Sputtering and reactive ion etching damage to the Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

As-patterned capacitors were positively poled by the dc plasma potential during RIE of Pt. The hysteresis loops of the capacitors were found to be shifted, slanted, and constricted by space charges trapped at domain boundaries. The PZT film having sputtering damage was very sensitive to RIE damage. Annealing the top electrode removed the effect of the space charges, resulting in a good symmetrical hysteresis loop. Annealing the top electrode below Curie temperature accelerated aging process. As Zr/Ti ratio decreased, field shift increased and annealing temperature at which field disappears also increased.