Process and properties of Pt/Pb(Zr,Ti)O-3/Pt integrated ferroelectric capacitors

被引：23
|
作者：
Torii, K [1 ]
Kawakami, H [1 ]
Miki, H [1 ]
Kushida, K [1 ]
Itoga, T [1 ]
Goto, Y [1 ]
Kumihashi, T [1 ]
Yokoyama, N [1 ]
Moniwa, M [1 ]
Shoji, K [1 ]
Kaga, T [1 ]
Fujisaki, Y [1 ]
机构：
[1] HITACHI LTD, SEMICOND DEV CTR, KOKUBUNJI, TOKYO 185, JAPAN
来源：
INTEGRATED FERROELECTRICS | 1997年 / 16卷 / 1-4期
关键词：
D O I：
10.1080/10584589708013026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-mu m feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.
引用
收藏
页码：21 / 28
页数：8
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