Carrier distribution control in bilayer graphene under a perpendicular electric field by interlayer stacking arrangements

被引:7
|
作者
Gao, Yanlin [1 ]
Okada, Susumu [1 ]
机构
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Dept Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan
基金
日本学术振兴会; 日本科学技术振兴机构;
关键词
DFT; Bilayer graphene; Dual-gate field-effective transistor; Carrier distribution; BAND-GAP; GRAPHITE; STATE;
D O I
10.35848/1882-0786/abdd76
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use density function theory to study the carrier distribution in bilayer graphene under a perpendicular electric field. The carrier distribution in bilayer graphene strongly depends on the interlayer stacking arrangements, field strength, and carrier concentration. Unusual carrier localization, which is dependent on the stacking arrangement, is observed under a high electric field and low carrier doping concentration. For all other field and carrier doping concentration conditions, the carriers are distributed throughout the layers, irrespective of the interlayer stacking arrangements.
引用
收藏
页数:6
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