Perpendicular Electric Field Effect on Electronic Properties of Bilayer Graphene

Band gap as a fundamental electronic parameter has a key role in switching devices in the way that by controlling band gap, switching parameters can be controlled. Bilayer Graphene (BLG) with applied perpendicular electric field is a suitable material for supporting this idea. Perfect BLG is a gapless semiconductor, whereas band gap can be opened and controlled by applying an external perpendicular electric field. Thus, BLG is called biased and contains two layers with different potentials assigned to them. In this study, the effect of perpendicular electric field on the reasonable band gap and conductance of BLG is modelled. Based on the presented model, BLG conductance for different values of potential difference between the layers is plotted. It is observed that the conductance decreases as perpendicular electric field increases. Finally, the BLG modelling data of both conductance and resistance are compared with the experimental data to evaluate the accuracy of the proposed model and an acceptable agreement is reported.