Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic

被引：9
|
作者：
Saeidmanesh, M. [1 ]
Ahmadi, M. T. [1 ]
Ghadiry, M. [2 ]
Akbari, E. [1 ]
Kiani, M. J. [1 ]
Ismail, Razali [1 ]
机构：
[1] Univ Teknol Malaysia, Fac Elect Engn, Dept Elect Engn, Skudai 81310, Johor Darul Tak, Malaysia
[2] Univ Teknol Malaysia, Fac Elect Engn, Utm Johor Bahru 81310, Johor, Malaysia
来源：
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2013年 / 10卷 / 09期
关键词：
Bilayer Graphene; Density of State; Carrier Concentration; Interlayer Potential; TUNABLE BANDGAP; GAS;
D O I：
10.1166/jctn.2013.3158
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this paper, the effect of interlayer voltage V on the bandgap and density of state (DOS) and carrier concentration is analysed using a new analytical approach. We begin by modelling of the DoS followed by carrier concentration as a function V. In addition, we model the carrier concentration in degenerate and non-degenerate regimes and the effect of V on them is studied. It is found that as V increases, carrier concentration and bandgap increase too. In addition, we realized that there is a saturation point in profile of bangap respect to V, which is calculated in this paper.
引用
收藏
页码：1975 / 1978
页数：4
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