Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

被引：33

作者：

Sugiura, S. ^{[1
]}

Hayashi, Y. ^{[1
]}

Kishimoto, S. ^{[1
,2
]}

Mizutani, T. ^{[1
]}

Kuroda, M. ^{[3
]}

Ueda, T. ^{[3
]}

Tanaka, T. ^{[3
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Panasonic Corp, Semicond Device Res Ctr, Semicond Co, Nagaokakyou 6178520, Japan

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 01期

基金：

日本学术振兴会;

关键词：

HfO2; AlGaN/GaN; MOSFET; Normally-off; VOLTAGE; HEMTS;

D O I：

10.1016/j.sse.2009.10.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated III-nitride metal-oxide field effect transistors (MOSFETs) using high-k HfO2 as a gate oxide. Two types of MOSIFETs were studied; GaN MOSIFETs and AlGaN/GaN MOSFETs. In the case of GaN MOSIFETs, the maximum transconductance of 45 mS/mm has been obtained. This is seven times larger than the best-reported value, to our knowledge, for the normally-off GaN MOSIFETs with SiO2 gate oxide. In order to improve the performance of the device, AlGaN/GaN MOSFETs in which high-quality AlGaN/GaN heterointerface is used as a channel have been fabricated. The maximum transconductance and drain current were as high as 160 mS/mm and 840 mA/mm, respectively. (C) 2009 Elsevier Ltd. All rights reserved.

引用

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页码：79 / 83

页数：5

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