High Coupling Coefficient Temperature Compensated FBAR Resonator for Oscillator Application with Wide Pulling Range

被引:28
|
作者
Zou, Qiang [1 ]
Lee, Donald [1 ]
Bi, Frank [1 ]
Ruby, Richard [1 ]
Small, Martha [1 ]
Ortiz, Steve [1 ]
Oshmyansky, Yury [1 ]
Kaitila, Jyrki [2 ]
机构
[1] Avago Technol US Inc, Wireless Semicond Div, Ft Collins, CO 80525 USA
[2] Avago Technol GmbH, Wireless Semicond Div, Munich, Germany
关键词
D O I
10.1109/FREQ.2010.5556250
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt(2). One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt(2) of 4.28% and linear TCF of 0 ppm/degrees C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt(2) as high as 5.6% and linear TCF of -6 ppm/degrees C. Significant Kt(2) improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt(2)). High Kt(2) TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.
引用
收藏
页码:646 / 651
页数:6
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