High Coupling Coefficient Temperature Compensated FBAR Resonator for Oscillator Application with Wide Pulling Range

被引：28

作者：

Zou, Qiang ^{[1
]}

Lee, Donald ^{[1
]}

Bi, Frank ^{[1
]}

Ruby, Richard ^{[1
]}

Small, Martha ^{[1
]}

Ortiz, Steve ^{[1
]}

Oshmyansky, Yury ^{[1
]}

Kaitila, Jyrki ^{[2
]}

机构：

[1] Avago Technol US Inc, Wireless Semicond Div, Ft Collins, CO 80525 USA

[2] Avago Technol GmbH, Wireless Semicond Div, Munich, Germany

来源：

2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2010年

关键词：

D O I：

10.1109/FREQ.2010.5556250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt(2). One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt(2) of 4.28% and linear TCF of 0 ppm/degrees C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt(2) as high as 5.6% and linear TCF of -6 ppm/degrees C. Significant Kt(2) improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt(2)). High Kt(2) TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.

引用

页码：646 / 651

页数：6

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