Ultra-thin PZT/Si chip integrated on paper substrates

被引:3
|
作者
Yamashita, Takahiro [1 ]
Takeshita, Toshihiro [1 ]
Oouchi, Atsushi [1 ]
Kobayashi, Takeshi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan
关键词
Paper; PZT; Ultra-thin; Speaker; Flexible hybrid electronics; SPEAKER;
D O I
10.35848/1347-4065/ac1386
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents the integration process of an ultra-thin PZT/Si chip on paper and that it functions as a simple speaker by applying a voltage in the audible frequency range. The PZT/Si chip used is only 5 mu m thick, so it does not interfere with the flexibility of the substrate, and it can be integrated on paper because it does not use a high-temperature process in the electrode connection process. We have revealed that a paper with an ultra-thin PZT/Si chip of only 1 x 5 mm(2) in size generates a fully audible sound pressure level (SPL) of about 40 dB. It was rounded to a radius of curvature of 1 cm without breaking. The overall SPL was about the same even when the paper substrate dimension was reduced to 50 mm square. This technology is expected to be applied to electronic components such as surround speakers or haptics in electronic paper.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Silicide formation during reaction between Ni ultra-thin films and Si(001) substrates
    Fouet, J.
    Texier, M.
    Richard, M. -I.
    Portavoce, A.
    Mangelinck, D.
    Guichet, C.
    Boudet, N.
    Thomas, O.
    MATERIALS LETTERS, 2014, 116 : 139 - 142
  • [22] Localized Ultra-Thin GeOI: an innovative approach to Germanium channel MOSFETs on Bulk Si substrates
    Batail, E.
    Monfray, S.
    Tabone, C.
    Kermarrec, O.
    Damlencourt, J. F.
    Gautier, P.
    Rabille, G.
    Arvet, C.
    Loubet, N.
    Campidelli, Y.
    Hartmann, J. M.
    Pouydebasque, A.
    Delaye, V.
    Le Royer, C.
    Ghibaudo, G.
    Skotnicki, T.
    Deleonibus, S.
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 397 - +
  • [23] Ultra-thin flexible ceramic substrates for electronic applications
    Olenick, J.A., 1600, IMAPS-International Microelectronics and Packaging Society (41):
  • [24] Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
    Stathis, JH
    Bolam, R
    Yang, M
    Hook, TB
    Chou, A
    Larosa, G
    MICROELECTRONIC ENGINEERING, 2005, 80 : 126 - 129
  • [25] Mechanics analysis and experimental study of ultra-thin chip peeling from pre-stretching substrates
    Chen, Siyu
    Shi, Kewen
    Kong, Ziwen
    Ma, Yinji
    Feng, Xue
    INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2025, 308
  • [26] On the Design and Simulation of Antennas on Ultra-thin Flexible Substrates
    Kashkool, Ahmed
    Yahya, Samer
    Al-Rizzo, Hussain
    Al-Wahhamy, Abbas
    Issac, Ayman A.
    APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL, 2018, 33 (07): : 798 - 801
  • [27] Ultra-thin Silicon Substrates for Nanostructured Solar Cells
    Koval, V.
    Ivashchuk, A.
    Yakymenko, Yu.
    Dusheyko, M.
    Fadieiev, M.
    Matkivskyi, V.
    2017 IEEE 37TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2017, : 217 - 220
  • [28] Flexible and Ultra-Thin Glass Substrates for RF Applications
    Sivapurapu, Sridhar
    Chen, Rui
    Rehman, Mutee Ur
    Kanno, Kimiyuki
    Kakutani, Takenori
    Letz, Martin
    Liu, Fuhan
    Sitaraman, Suresh K.
    Swaminathan, Madhavan
    IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021), 2021, : 1638 - 1644
  • [29] Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates
    L. A. Delimova
    N. V. Zaitseva
    V. V. Ratnikov
    V. S. Yuferev
    D. S. Seregin
    K. A. Vorotilov
    A. S. Sigov
    Physics of the Solid State, 2021, 63 : 1145 - 1152
  • [30] Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates
    Delimova, L. A.
    Zaitseva, N., V
    Ratnikov, V. V.
    Yuferev, V. S.
    Seregin, D. S.
    Vorotilov, K. A.
    Sigov, A. S.
    PHYSICS OF THE SOLID STATE, 2021, 63 (08) : 1145 - 1152