Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications

被引：0

作者：

Pan, CL ^{[1
]}

Lin, GR ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS II | 1998年 / 3277卷

关键词：

arsenic-ion-implanted GaAs; GaAs : As+; ultrafast; photoconductive switch;

D O I：

10.1117/12.306153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Arsenic-ion-implanted GaAs (or GaAs:As+), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally-annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained.

引用

页码：170 / 178

页数：9

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