On-Wafer Time-Domain Measurement of Pulse-to-Pulse Stability for Microwave Power GaN HEMT

被引：0

作者：

Fakhfakh, S. ^{[1
]}

Ayari, L. ^{[1
]}

Martin, A. ^{[1
]}

Campovecchio, M. ^{[1
]}

Neveux, G. ^{[1
]}

Barataud, D. ^{[1
]}

机构：

[1] Univ Limoges, XLIM UMR 7252, 123 Ave Albert Thomas, F-87060 Limoges, France

来源：

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年

关键词：

Pulse-to-pulse stability; GaN HEMT; DQD; time-domain envelope measurements;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, on-wafer time-domain envelope measurements of pulse-to-pulse (P2P) stability are reported in this paper. In the case of a radar burst, these on-wafer measurements are performed on a 10W power GaN HEMT in S-Band by using a digital quadrature demodulation (DQD) as complex envelope extraction technique. The impact of an irregular RF pulse train on the measured P2P stability at device level is illustrated by the influence of load impedance, input power and bias conditions.

引用

页码：613 / 616

页数：4

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