1.3-W ripple-free superluminescent diode

被引：18
|
作者：
Burrow, L [1 ]
Causa, F [1 ]
Sarma, J [1 ]
机构：
[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 10期
关键词：
optoelectronic devices; semiconductor device modeling; superluminescent diodes (SLDs);
D O I：
10.1109/LPT.2005.853027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-mn high-power triple quantum-well InGaAs-AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.
引用
收藏
页码：2035 / 2037
页数：3
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