The Model of Nano-Scale Copper Particle Removal from Silicon Surface in High Pressure CO2+H2O and CO2+H2O+IPA Cleaning Solutions

被引：1

作者：

Tan, Xin ^{[1
]}

Chai, Jiajue ^{[1
]}

Zhang, Xiaogang ^{[1
]}

Chen, Jiawei ^{[2
]}

机构：

[1] Renmin Univ China, Dept Chem, Beijing 100872, Peoples R China

[2] China Univ Geosci, State Key Lab Geol Proc & Mineral Resources, Beijing 100083, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 12期

关键词：

Equilibrium Separation Distance; Net Adhesion Force; High Pressure; Supercritical CO2; SUPERCRITICAL CARBON-DIOXIDE; LOW-K DIELECTRICS; WATER; SYSTEM;

D O I：

10.1166/jnn.2011.3970

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This study focuses on the description of the static forces in CO2-H2O and CO2-H2O-IPA cleaning solutions with a separate fluid phase entrapped between nano-scale copper particles and a silicon surface. Calculations demonstrate that increasing the pressure of the cleaning system decreases net adhesion force (NAF) between the particle and silicon. The NAF of a particle for in CO2-H2O-PA system is less than that in CO2-H2O system, suggesting that the particles enter into bulk layer more easily as the CO2-H2O cleaning system is added IPA.

引用

页码：10782 / 10786

页数：5

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