Epitaxial growth of GaAs thin layers on NiSb substrates

被引：0

作者：

Aitkhozhin, S. A. ^{[1
]}

Artemov, A. S. ^{[1
]}

Belousov, P. S. ^{[1
]}

Bobylev, M. A. ^{[1
]}

Kaevitser, E. V. ^{[1
]}

Lyubchenko, V. E. ^{[1
]}

Petrov, K. P. ^{[1
]}

Temirov, Yu Sh ^{[1
]}

Farafonov, S. B. ^{[1
]}

机构：

[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141190, Moscow Oblast, Russia

来源：

INORGANIC MATERIALS | 2015年 / 51卷 / 02期

关键词：

Epilayers - Nickel compounds - III-V semiconductors - Molecular beam epitaxy - Antimony compounds - Semiconducting gallium - Single crystals;

D O I：

10.1134/S002016851501001X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth of gallium arsenide epilayers on the surface of single-crystal NiSb having metallic conduction. The gallium arsenide epilayers were grown by molecular beam epitaxy under conditions typical of the fabrication of homoepitaxial structures. Structural and morphological characterization of the GaAs films showed that the growth process involved a transition from a textured polycrystal to a more ordered layer with a well-defined system of diffraction spots in its electron diffraction pattern, indicative of an epitaxial process.

引用

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页码：83 / 87

页数：5

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