High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

被引：0

作者：

Ma, XY ^{[1
]}

Cao, Q ^{[1
]}

Wang, ST ^{[1
]}

Guo, L ^{[1
]}

Lian, P ^{[1
]}

Wang, LM ^{[1
]}

Zhang, XY ^{[1
]}

Yang, YL ^{[1
]}

Zhang, HQ ^{[1
]}

Wang, GH ^{[1
]}

Chen, LH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

AlGaInP; quantum well; laser diode; MOCVD;

D O I：

10.1117/12.311001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

引用

页码：131 / 136

页数：6

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