Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures

被引：8
|
作者：
Jursenas, S [1 ]
Miasojedovas, S [1 ]
Kurilcik, G [1 ]
Zukauskas, A [1 ]
Feng, SW [1 ]
Cheng, YC [1 ]
Yang, CC [1 ]
Kuo, CT [1 ]
Tsang, JS [1 ]
机构：
[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania
来源：
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词：
D O I：
10.1002/pssc.200303285
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Room-temperature lateral emission in In0.15Ga0.85N/GaN multiple quantum wells (MQWs) of various well thicknesses has been studied by means of excitation-density and time-resolved photoluminescence spectroscopy. The lowest threshold of stimulated emission and the highest emission efficiency has been observed in the structures with the well thickness d = 3 nm. The existence of an optimal well thickness is attributed to enhanced nonradiative recombination for thinner wells and to larger-well-width-invoked indium segregation that results in broadening of the local-state distribution. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2610 / 2613
页数：4
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