Optically activated charge domain model for high-gain GaAs photoconductive switches

被引：0
|
作者：
Liang, ZX
Shi, W
Feng, J
Xu, CX
机构：
来源：
IEEE 1996 ANNUAL REPORT - CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, VOLS I & II | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) has been proposed. The switching transition of high-gain PCSS's can be described with are optically activated luminous charge domain. The formation and radiation transit, accumulation of the charge domain are related with the triggering and sustaining phrases of PCSS's, respectively.
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页码：726 / 729
页数：4
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