Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution

被引：8
|
作者：
Chen, YF [1 ]
Wang, L [1 ]
Mo, CL [1 ]
Pu, Y [1 ]
Fang, WQ [1 ]
Jiang, FY [1 ]
机构：
[1] Nanchang Univ, Inst Mat Sci, Jiangxi 330047, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 05期
基金：
中国国家自然科学基金;
关键词：
ZnO; thin film; hydrogen peroxide; MOCVD; etching;
D O I：
10.1016/j.mssp.2004.12.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the results of hydrogen peroxide solution treatment carried out on high-quality ZnO thin film grown on Al2O3 (0 0 0 1) substrate by atmospheric pressure MOCVD. A structural study was carried out by double-crystal X-ray diffraction (Bede QC200, CuKalpha = 1.54 angstrom) and the PL spectra of samples were obtained by He-Cd laser (lambda = 325 nm). The samples were treated employing 30% hydrogen peroxide (H2O2) solution (pH = 3-4). Our results show that there are changes in the luminescent property of ZnO thin films treated in the 30% H2O2, and the samples can be etched slightly by H2O2 solution with a pH of 3-4. The average etching rates obtained for different samples were estimated by atomic force microscopy. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：569 / 575
页数：7
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