Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution

We present the results of hydrogen peroxide solution treatment carried out on high-quality ZnO thin film grown on Al2O3 (0 0 0 1) substrate by atmospheric pressure MOCVD. A structural study was carried out by double-crystal X-ray diffraction (Bede QC200, CuKalpha = 1.54 angstrom) and the PL spectra of samples were obtained by He-Cd laser (lambda = 325 nm). The samples were treated employing 30% hydrogen peroxide (H2O2) solution (pH = 3-4). Our results show that there are changes in the luminescent property of ZnO thin films treated in the 30% H2O2, and the samples can be etched slightly by H2O2 solution with a pH of 3-4. The average etching rates obtained for different samples were estimated by atomic force microscopy. (c) 2005 Elsevier Ltd. All rights reserved.