Floquet Engineering Topological Many-Body Localized Systems

被引:28
|
作者
Decker, K. S. C. [1 ]
Karrasch, C. [1 ]
Eisert, J. [2 ,3 ]
Kennes, D. M. [4 ,5 ,6 ]
机构
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Math Phys, Mendelssohnstr 3, D-38106 Braunschweig, Germany
[2] Free Univ Berlin, Dahlem Ctr Complex Quantum Syst, D-14195 Berlin, Germany
[3] Free Univ Berlin, Fachbereich Phys, D-14195 Berlin, Germany
[4] Rhein Westfal TH Aachen, Inst Theorie Stat Phys, D-52056 Aachen, Germany
[5] Rhein Westfal TH Aachen, JARA Fundamentals Future Informat Technol, D-52056 Aachen, Germany
[6] Max Planck Inst Struct & Dynam Matter, Ctr Free Electron Laser Sci, D-22761 Hamburg, Germany
关键词
QUANTUM; INSULATOR;
D O I
10.1103/PhysRevLett.124.190601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show how second-order Floquet engineering can be employed to realize systems in which many-body localization coexists with topological properties in a driven system. This allows one to implement and dynamically control a symmetry protected topologically ordered qubit even at high energies, overcoming the roadblock that the respective states cannot be prepared as ground states of nearest-neighbor Hamiltonians. Floquet engineering-the idea that a periodically driven nonequilibrium system can effectively emulate the physics of a different Hamiltonian-is exploited to approximate an effective three-body interaction among spins in one dimension, using time-dependent two-body interactions only. In the effective system, emulated topology and disorder coexist, which provides an intriguing insight into the interplay of many-body localization that defies our standard understanding of thermodynamics and into the topological phases of matter, which are of fundamental and technological importance. We demonstrate explicitly how combining Floquet engineering, topology, and many-body localization allows one to harvest the advantages (time-dependent control, topological protection, and reduction of heating, respectively) of each of these subfields while protecting them from their disadvantages (heating, static control parameters, and strong disorder).
引用
收藏
页数:7
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