A phosphine detection matrix using nanostructure modified porous silicon gas sensors

被引:56
|
作者
Ozdemir, Serdar [1 ]
Gole, James L. [1 ,2 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mech Engn, Atlanta, GA 30332 USA
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2010年 / 151卷 / 01期
基金
美国国家科学基金会;
关键词
Gas sensor; Porous silicon; Metal oxide nanostructures; Phosphine dete ction; INTERFACES; COPPER; FILMS;
D O I
10.1016/j.snb.2010.08.016
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We discuss the selective modification of porous silicon (PS) conductometric gas sensors for phosphine detection. Tin, nickel, copper and gold are electrolessly deposited onto nanopore covered microporous porous silicon surfaces forming SnOx, NiO, CuxO and AuxO nanostructured centers. Further studies have also been carried out with nanostructured alumina coated porous silicon. The porous silicon surface is analyzed for the metal oxides considered using XPS measurements. These experiments demonstrate that the indicated metals are deposited to the nanopore covered micropores of the PS interface and are oxidized to form metal oxide sites. The sensitivity change of these modified porous silicon gas sensor surfaces has been measured under 1-5 ppm PH3 exposure. An improved sensitivity, of the order of 5 times that of untreated porous silicon, for 1 ppm exposure is observed. The selection of the nanostructure deposition is based on the hard to soft acid character of the nanostructured deposit and its subsequent effect on the physisorption of PH3, an intermediate base. The observed behavior follows an inverse pattern IHSAB to the hard soft acid-base concept. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:274 / 280
页数:7
相关论文
共 50 条
  • [41] DIFFUSION OF PHOSPHORUS INTO SILICON USING PHOSPHINE GAS AS A SOURCE.
    Ghosh Dastidar, S.N.
    1600, (18):
  • [42] Porous Silicon Interferometric Sensors for the Detection of Nerve Agent Mimics Using Various Light Sources
    Jang, Seunghyun
    Koh, Youngdae
    Kim, Jihoon
    Jung, Kyoungsun
    Sohn, Honglae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (01) : 294 - 298
  • [43] Reducing Detection Limits of Porous Silicon Thin Film Optical Sensors using Signal Processing
    Ward, Simon
    Weiss, Sharon M.
    FRONTIERS IN BIOLOGICAL DETECTION: FROM NANOSENSORS TO SYSTEMS XIII, 2021, 11662
  • [44] Occupancy Detection using Gas Sensors
    Szczurek, Andrzej
    Maciejewska, Monika
    Pietrucha, Tomasz
    SENSORNETS: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON SENSOR NETWORKS, 2017, : 99 - 107
  • [45] Role of microstructure and layer thickness in porous silicon conductometric gas sensors
    Gaburro, Z
    Oton, CJ
    Ghulinyan, M
    Pancheri, L
    Pavesi, L
    Capuj, N
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (08): : 1467 - 1471
  • [46] Observation of oxygen gas effect on porous silicon-based sensors
    Khoshnevis, S.
    Dariani, R. S.
    Azim-Araghi, M. E.
    Bayindir, Z.
    Robbie, K.
    THIN SOLID FILMS, 2006, 515 (04) : 2650 - 2654
  • [47] Carbonization of porous silicon optical gas sensors for enhanced stability and sensitivity
    Torres-Costa, V.
    Salonen, J.
    Jalkanen, T. M.
    Lehto, V. -P.
    Martin-Palma, R. J.
    Martinez-Duart, J. M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06): : 1306 - 1308
  • [48] Availability of Current-Voltage characteristics for porous silicon gas sensors
    Skryshevsky, VA
    Strikha, VI
    Mamikin, AV
    Vikoulov, VA
    Polishchuk, V
    Souteyrand, E
    Martin, JR
    EUROSENSORS XII, VOLS 1 AND 2, 1998, : 277 - 280
  • [49] Porous Silicon-Based Gas Sensors and Miniature Hydrogen Cells
    Dzhafarov, Tayyar
    Yuksel, Surevya Aydin
    Lus, Cigdem Oruc
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (10) : 8204 - 8207
  • [50] Bias enhanced sensitivity in amorphous/porous silicon heterojunction gas sensors
    Tucci, M
    La Ferrara, V
    Della Noce, M
    Massera, E
    Quercia, L
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 776 - 779