Ion implanted GaAs for ultrafast optoelectronic applications

被引：0

作者：

Jagadish, C ^{[1
]}

Tan, HH ^{[1
]}

Jasinski, J ^{[1
]}

Korona, KP ^{[1
]}

Kaminska, M ^{[1
]}

Viselga, R ^{[1
]}

Marcinkevicius, S ^{[1
]}

Krotkus, A ^{[1
]}

Lederer, MJ ^{[1
]}

Luther-Davies, B ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS | 1998年 / 98卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the results on MeV ion implanted GaAs with As, Ga, Si and O ions. The influence of annealing on the electron transport, carrier lifetime and structural properties has been studied. Chemical effects of the implanted ions and their role in controlling electrical and recombination properties are discussed. We also report the results on ion implanted saturable absorbers for passive mode locking of short pulse lasers.

引用

页码：279 / 288

页数：10

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