Ultrafast trapping times in ion implanted InP

被引：10
|
作者：
Carmody, C [1 ]
Boudinov, H
Tan, HH
Jagadish, C
Lederer, MJ
Kolev, V
Luther-Davies, B
Dao, LV
Gal, M
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia
[3] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[4] UFRGS, Inst Fis, Porto Alegre, RS, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 05期
关键词：
D O I：
10.1063/1.1493651
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x10(16) cm(-2) and p-type InP was implanted with doses between 1x10(12) and 1x10(16) cm(-2). Subsequently, rapid thermal annealing at temperatures between 400 and 700 degreesC was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity. (C) 2002 American Institute of Physics.
引用
收藏
页码：2420 / 2423
页数：4
相关论文
共 50 条
  • [1] Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
    Carmody, C
    Tan, HH
    Jagadish, C
    Gaarder, A
    Marcinkevicius, S
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) : 1074 - 1078
  • [2] Ultrafast carrier trapping and recombination in high resistivity ion implanted InP
    Gaarder, A
    Marcinkevicius, S
    Carmody, C
    Tan, HH
    Jagadish, C
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 441 - 444
  • [3] Ion-implanted InP for ultrafast photodetector applications
    Carmody, C
    Boudinov, H
    Tan, HH
    Jagadish, C
    Dao, LV
    Gal, M
    COMMAD 2000 PROCEEDINGS, 2000, : 153 - 156
  • [4] DEEP-LEVEL TRAPPING IN ION-IMPLANTED INP JFETS
    KRUPPA, W
    BOOS, JB
    SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1735 - 1741
  • [5] Ultrafast carrier trapping in high energy ion implanted indium phosphide
    Carmody, C
    Boudinov, H
    Tan, HH
    Jagadish, C
    Dao, LV
    Gal, M
    2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 221 - 224
  • [6] Ultrafast carrier trapping in high energy ion implanted gallium arsenide
    Jagadish, C
    Tan, HH
    Krotkus, A
    Marcinkevicius, S
    Korona, KP
    Kaminska, M
    APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2225 - 2227
  • [7] Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs
    Korona, KP
    Jasinski, J
    Kurpiewski, A
    Kaminska, M
    Jagadish, C
    Tan, HH
    Krotkus, A
    Marcinkevicius, S
    ACTA PHYSICA POLONICA A, 1996, 90 (04) : 851 - 854
  • [8] Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs
    Jagadish, C
    Tan, HH
    Krotkus, A
    Marcinkevicius, S
    Korona, K
    Jasinski, J
    Kaminska, M
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 41 - 44
  • [9] DEFECT RECOVERY OF ION-IMPLANTED INP
    WEYER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 315 - 318
  • [10] ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP
    BAHIR, G
    MERZ, JL
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2187 - 2193
12345