Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

被引：35
|
作者：
Park, K. -S. [1 ,2 ]
Baek, K. -H. [1 ]
Kim, D. P. [1 ]
Woo, J. -C. [1 ]
Do, L. -M. [1 ]
No, K. -S. [2 ]
机构：
[1] Elect & Telecommun Res Inst, RFID USN Res Dept, Taejon 305700, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 04期
关键词：
Hafnium; HfOxNy; High-k dielectric; Plasma nitridation; THERMAL-STABILITY; THIN-FILMS;
D O I：
10.1016/j.apsusc.2010.08.069
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The remote plasma nitridation (RPN) of an HfO2 film using N-2 and NH3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 degrees show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO2 film nitrided with NH3-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfOxNy gate dielectric nitrided with NH3-RPN have a smaller equivalent oxide thickness than that nitrided with N-2-RPN in spite of its thicker interfacial layer. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1347 / 1350
页数：4
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