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Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing

被引：6
|
作者：
Liu, Jian-Shuang [1 ]
Geng, Yang [1 ]
Chen, Lin [1 ]
Sun, Qing-Qing [1 ]
Zhou, Peng [1 ]
Lu, Hong-Liang [1 ]
Zhang, David Wei [1 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
THIN SOLID FILMS | 2013年 / 529卷
基金：
中国国家自然科学基金;
关键词：
HfO2/Al2O3; stacks; High-k Dielectric; NH3; annealing; HFO2 GATE DIELECTRICS; HAFNIUM OXIDE; ELECTRICAL CHARACTERISTICS; PLASMA NITRIDATION; THERMAL-STABILITY; FILMS; GROWTH; PRECURSORS; SUBSTRATE; OXYGEN;
D O I：
10.1016/j.tsf.2012.03.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
HfO2/Al2O3 stacks are grown on Si (100) substrate by atomic layer deposition and then nitridized using ammonia (NH3) annealing in the temperature range of 600-900 degrees C. The effects of NH3 annealing temperature on the structural and physical properties are investigated. HfO2 phase changes from monoclinic to orthorhombic with the annealing treatment. Moreover, the increasing of the grain size and decreasing of the valence band maximum with increasing annealing temperature are demonstrated. In addition, the film annealed at 900 degrees C clearly shows that there exists an amorphous Al2O3 layer between partially crystalline HfO2 layer and the Si substrate. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：230 / 233
页数：4
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