Transient thermal analysis of InGaAsP-InP high-power diode laser arrays with different fill factors

被引:11
|
作者
Gourevitch, A [1 ]
Laikhtman, B
Westerfeld, D
Donetsky, D
Belenky, G
Trussell, CW
Shellenbarger, Z
An, H
Martinelli, RU
机构
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
[2] Power Photon, Stony Brook, NY 11794 USA
[3] USA, Nevada & Environm & Safety Directorate, Ft Belvoir, VA 22060 USA
[4] Sarnoff Corp, Princeton, NJ 08543 USA
[5] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
基金
以色列科学基金会;
关键词
D O I
10.1063/1.1884251
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature kinetics of InGaAsP/InP high-power laser diode arrays with different fill factors was studied experimentally and theoretically. It was shown that except during a short initial period, the laser array heating is determined by the heat flux propagation through the heat spreader. To characterize this heating, we developed a two-dimensional analytical model. Experimentally, the temperature change in the active region was obtained by measuring the laser spectrum's temporal evolution during a single current pulse. Three distinctive periods in the transient heating process were clearly identified-an initial temperature rise, a square-root-of-time dependence of the active-region temperature increase, and an exponential approach of the active-region temperature to its steady-state value. We demonstrated that in the initial period of time, the heat propagates within the laser bar structure, and the laser bar design (fill factor) strongly affects the active-region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. (C) 2005 American Institute of Physics.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] High-power laser arrays with 100% fill factor emission facet
    Yanson, Dan A.
    McDougall, Stewart D.
    Qiu, Bocang
    Loyo-Maldonado, Valentin
    Bacchin, Gianluca
    Robertson, Stephen
    Bon, Sebastien
    Marsh, John H.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909
  • [32] Performance of high-power laser diode arrays for spaceborne lasers
    Durand, Yannig
    Culoma, Alain
    Meynart, Roland
    Pinsard, Jean-Luc
    Volluet, Gerard
    APPLIED OPTICS, 2006, 45 (22) : 5752 - 5757
  • [33] Deep level spectroscopy of high-power laser diode arrays
    Tomm, JW
    Barwolff, A
    Jaeger, A
    Elsaesser, T
    Bollmann, J
    Masselink, WT
    Gerhardt, A
    Donecker, J
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1325 - 1332
  • [34] High-speed thermal measurements of high-power diode arrays
    Rada, Nicholas
    Triplett, Gregory
    Graham, Samuel
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 599 - +
  • [35] Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model
    Bezotosnyi, VV
    Kumykov, KK
    QUANTUM ELECTRONICS, 1998, 28 (03) : 217 - 220
  • [36] High-power broad-band single-mode InGaAsP/InP superluminescent diode
    N. A. Pikhtin
    Yu. V. Il’in
    A. Yu. Leshko
    A. V. Lyutetskii
    A. L. Stankevich
    I. S. Tarasov
    N. V. Fetisova
    Technical Physics Letters, 1999, 25 : 598 - 600
  • [37] High-power broad-band single-mode InGaAsP/InP superluminescent diode
    Pikhtin, NA
    Il'in, YV
    Leshko, AY
    Lyutetskii, AV
    Stankevich, AL
    Tarasov, IS
    Fetisova, NV
    TECHNICAL PHYSICS LETTERS, 1999, 25 (08) : 598 - 600
  • [38] Spatially resolved and temperature dependent thermal tuning rates of high-power diode laser arrays
    Kreissl, M
    Tien, TQ
    Tomm, JW
    Lorenzen, D
    Kozlowska, A
    Latoszek, M
    Oudart, M
    Nagle, J
    APPLIED PHYSICS LETTERS, 2006, 88 (13)
  • [39] Laser beam transformation technique for high-power laser diode linear arrays
    Grenier, P
    Taillon, Y
    Wang, M
    Topart, P
    Asselin, D
    Parent, A
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [40] High-power single-mode InGaAsP/InP laser diodes for pulsed operation
    Kotelnikov, Evgenii
    Katsnelson, Alexei
    Patel, Ketan
    Kudryashov, Igor
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277