High-power broad-band single-mode InGaAsP/InP superluminescent diode

被引：0
|
作者：
N. A. Pikhtin
Yu. V. Il’in
A. Yu. Leshko
A. V. Lyutetskii
A. L. Stankevich
I. S. Tarasov
N. V. Fetisova
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 1999年 / 25卷
关键词：
Radiation; Optical Fiber; Optical Power; Radiation Spectrum; Pump Current;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An InGaAsP/InP separate-confinement double heterostructure having a broad gain profile was used to fabricate superluminescent diodes having high optical power (40 mW), a broad radiation spectrum (65 nm at half-width), and low percent modulation (<1%). Using a cw pump current of 150 mA, 1mW of superluminescence radiation was obtained at the exit from a single-mode optical fiber.
引用
收藏
页码：598 / 600
页数：2
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