HIGH-POWER, BROAD-BAND INGAASP SUPERLUMINESCENT DIODE EMITTING AT 1.5-MU-M

被引：23

作者：

NOGUCHI, Y

YASAKA, H

MIKAMI, O

NAGAI, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.346093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.

引用

页码：2665 / 2667

页数：3

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