III-V microdisk/microring resonators and injection microlasers

被引:20
|
作者
Kryzhanovskaya, Natalia [1 ,2 ]
Zhukov, Alexey [1 ,2 ]
Moiseev, Eduard [1 ]
Maximov, Mikhail [1 ,2 ]
机构
[1] HSE Univ, Int Lab Quantum Optoelect, St Petersburg, Russia
[2] St Petersburg Acad Univ, Lab Nanophoton, St Petersburg, Russia
基金
俄罗斯科学基金会;
关键词
III-V semiconductor laser; microdisk; microring; quantum dots; quantum well; QUANTUM-DOT MICRODISK; WHISPERING-GALLERY-MODE; THRESHOLD CURRENT-DENSITY; CAVITY SEMICONDUCTOR-LASERS; FREE SPECTRAL RANGE; WAVE-GUIDE; LASING CHARACTERISTICS; SURFACE RECOMBINATION; MODULATION CHARACTERISTICS; MICRORING LASERS;
D O I
10.1088/1361-6463/ac1887
中图分类号
O59 [应用物理学];
学科分类号
摘要
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for creating compact, energy-efficient light sources (microlasers) for various applications owing to their small footprints, high Q factors, planar geometry, in-plane light emission, and high sensitivity to the environment. In this review we present the most recent advances in III-V microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators and discuss different designs of III-V microdisk/microring lasers. We focus on the technological key points of the different approaches to realize efficient optical and carrier confinement in the laser cavity. Advantages and disadvantages of various types of the laser active region, i.e. quantum well (QW) and quantum dots, are discussed. We also report on successful fabrication of microlasers with gain medium of mixed dimensionality, so called QW-dots, which is promising for low-threshold, temperature insensitive and high output power operation. We summarized and systematically compare the characteristics of electrically driven microlasers. We address one major shortcoming for the circular WGM lasers, which is that the lasing emission is non-directional and non-homogeneous along the cavity rim. High quality factor of the resonator modes and circular symmetry lead to difficulties in obtaining the directional light output and in obtaining significant levels of the output optical power. We compared various techniques for realizing unidirectional emission or coupling to a waveguide. We also discuss high-speed direct modulation, which is another crucial characteristic for the microlasers. We also address energy consumption characteristics of the WGM microlasers under direct modulation and possibilities of energy-to-data ratio minimization. Finally, we summarize the prospects for the WGM lasers and their role in future applications in communications and sensing.
引用
收藏
页数:19
相关论文
共 50 条
  • [21] 10-GHz All-Optical Gate Based on a III-V/SOI Microdisk
    Kumar, Rajesh
    Liu, Liu
    Roelkens, Gunther
    Geluk, Erik-Jan
    de Vries, Tjibbe
    Karouta, Fouad
    Regreny, Philippe
    Van Thourhout, Dries
    Baets, Roel
    Morthier, Geert
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (13) : 981 - 983
  • [22] Electrical and optical properties of III-V microdisk based LASERs fabricated on a CMOS pilot line
    Mandorlo, Fabien
    Rojo-Romeo, Pedro
    Letartre, Xavier
    Fedeli, Jean-Marc
    Orobtchouk, Regis
    Grenouillet, Laurent
    Regreny, Philippe
    Viktorovitch, Pierre
    Sohrab, Hossain M. D.
    2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2010, : 25 - 27
  • [23] III-V semiconductor resonators: A new strategy for broadband light perfect absorbers
    Liu, Xiaoshan
    Chen, Jian
    Liu, Jiasong
    Huang, Zhenping
    Yu, Meidong
    Pan, Pingping
    Liu, Zhengqi
    APPLIED PHYSICS EXPRESS, 2017, 10 (11)
  • [24] Microwave III-V semiconductors for telecommunications and prospective of the III-V industry
    Wu, CS
    PROCEEDING OF THE 2002 3RD INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2002, : 223 - 223
  • [25] A Thermally Tunable III-V Compound Semiconductor Microdisk Laser Integrated on Silicon-on-Insulator Circuits
    Liu, Liu
    Spuesens, Thijs
    Roelkens, Guenther
    Van Thourhout, Dries
    Regreny, Philippe
    Rojo-Romeo, Pedro
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (17) : 1270 - 1272
  • [26] III-V nanoelectronics
    Beaumont, SP
    MICROELECTRONIC ENGINEERING, 1996, 32 (1-4) : 283 - 295
  • [27] MODIFICATION OF HETEROJUNCTION BAND OFFSETS AT III-V/IV/III-V INTERFACES
    FRANCIOSI, A
    SORBA, L
    BRATINA, G
    BIASIOL, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1628 - 1637
  • [28] FUNDAMENTAL-STUDIES OF III-V SURFACES AND THE (III-V)-OXIDE INTERFACE
    SPICER, WE
    LINDAU, I
    PIANETTA, P
    CHYE, PW
    GARNER, CM
    THIN SOLID FILMS, 1979, 56 (1-2) : 1 - 18
  • [29] Fatigue Failure Of Concentrator III-V Solar Cells - Does Forward Bias Current Injection Really Kill III-V CPV Cells?
    Araki, Kenji
    Nagai, Hirokazu
    Tamura, Kazuyuki
    8TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS (CPV-8), 2012, 1477 : 281 - 284
  • [30] III-V surface plasma nitridation: A challenge for III-V nitride epigrowth
    Losurdo, M
    Capezzuto, P
    Bruno, G
    Leo, G
    Irene, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 2194 - 2201