Modeling charge-carrier transport and generation-recombination mechanisms in p+n+ a-Si tunnel junctions

被引：2
|
作者：
Furlan, J [1 ]
Gorup, Z [1 ]
Smole, F [1 ]
Topic, M [1 ]
机构：
[1] Univ Ljubljana, Fac Elect Engn, Ljubljana 1001, Slovenia
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期
关键词：
tunnel-junction; amorphous silicon; modeling;
D O I：
10.1016/S0927-0248(00)00167-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Electrical contacts between subcells in a-Si tandem solar cells are n(+)p(+) junctions in which a highly conductive path is provided by charge-carrier tunneling transitions between extended states and the states in the gap of a-Si. A tunneling-assisted capture-emission model of carriers is developed in n(+)p(+) a-Si junctions with a high built-in electrical field in the depletion region. The pure thermal and the tunneling-assisted thermal capture and emission of carriers determine the occupancy function in the mobility gap and generation-recombination rates in the space-charge region. The developed model is applied to calculate the current-voltage characteristics of an n(+)p(+) a-Si junction, and a good agreement with measured characteristics is obtained. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：147 / 153
页数：7
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