GENERATION-RECOMBINATION NOISE IN SILICON p + -n-n + JUNCTIONS WITH A STRONGLY COMPENSATED n-TYPE REGION.

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作者：
Matukas, I.P. [1 ]
Palenskis, V.P. [1 ]
机构：
[1] Vilnius State Univ, Vilnius, USSR, Vilnius State Univ, Vilnius, USSR
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| 1600年 / 18期
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摘要：
SEMICONDUCTOR DEVICES
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