GENERATION-RECOMBINATION PHENOMENA IN ALMOST IDEAL SILICON P-N-JUNCTIONS

被引：22

作者：

CEROFOLINI, GF ^{[1
]}

POLIGNANO, ML ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6349 / 6356

页数：8

共 50 条

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