Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

被引：5
|
作者：
Soro, Y. M. [1 ,2 ,3 ,4 ]
Abramov, A. [5 ,6 ]
Gueunier-Farret, M. E. [1 ,2 ,3 ,4 ]
Johnson, E. V. [5 ]
Longeaud, C. [1 ,2 ,3 ,4 ]
Roca i Cabarrocas, P. [5 ]
Kleider, J. P. [1 ,2 ,3 ,4 ]
机构：
[1] CNRS, UMR8507, Lab Genie Elect Paris, F-91192 Gif Sur Yvette, France
[2] SUPELEC, F-91192 Gif Sur Yvette, France
[3] Univ Paris 11, F-91192 Gif Sur Yvette, France
[4] Univ Paris 06, UPMC, F-91192 Gif Sur Yvette, France
[5] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
[6] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 20期
关键词：
polymorphous silicon; high deposition rate; transport properties; defects;
D O I：
10.1016/j.tsf.2007.12.123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (similar to 8 angstrom/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si: H, or even can exceed them, at least for diffusion length in both states before and after light-soaking. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：6888 / 6891
页数：4
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