Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

被引：5

作者：

Soro, Y. M. ^{[1
,2
,3
,4
]}

Abramov, A. ^{[5
,6
]}

Gueunier-Farret, M. E. ^{[1
,2
,3
,4
]}

Johnson, E. V. ^{[5
]}

Longeaud, C. ^{[1
,2
,3
,4
]}

Roca i Cabarrocas, P. ^{[5
]}

Kleider, J. P. ^{[1
,2
,3
,4
]}

机构：

[1] CNRS, UMR8507, Lab Genie Elect Paris, F-91192 Gif Sur Yvette, France

[2] SUPELEC, F-91192 Gif Sur Yvette, France

[3] Univ Paris 11, F-91192 Gif Sur Yvette, France

[4] Univ Paris 06, UPMC, F-91192 Gif Sur Yvette, France

[5] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

[6] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

关键词：

polymorphous silicon; high deposition rate; transport properties; defects;

D O I：

10.1016/j.tsf.2007.12.123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (similar to 8 angstrom/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si: H, or even can exceed them, at least for diffusion length in both states before and after light-soaking. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：6888 / 6891

页数：4

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