Voltage-tunable duial-band In(Ga)As quantum-ring infrared photodetector

被引：12

作者：

Dai, Jong-Horng

Lin, Y-I-Hing

Lee, Si-Chen ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 17-20期

关键词：

dual bands infrared photodetector; quantum dots (QDs); quantum ring;

D O I：

10.1109/LPT.2007.903344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 mu m at biases less than 0.6 V to the middle wavelength of 6.8 mu m at biases larger than 0.8 V. The maximum peak responsivity at 20 K is 422 mA/W at 1.2-V bias.

引用

页码：1511 / 1513

页数：3

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